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In a p-n-p transistor, carriers known as holes move into the base region, whereas in an n-p-n transistor, electrons are introduced into the base. The emitter-base junction is set to a forward-biased state.

1. The voltage amplification factor for the new transistor G' equals two-thirds of G.
2. The gain G is represented as 25 times the output resistance divided by the input resistance, multiplied by 0.03.
3. In a p-n-p transistor, holes are introduced into the base, while in an n-p-n transistor, electrons are injected into the base. The emitter-base junction is forward biased.
4. Refer to the provided diagram.

Correct answer: In a p-n-p transistor, holes are introduced into the base, while in an n-p-n transistor, electrons are injected into the base. The emitter-base junction is forward biased.

Solution

Option C is correct as it correctly describes the operation of p-n-p and n-p-n transistors, where the emitter-base junction is forward biased, and the respective charge carriers (holes or electrons) are injected into the base.

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