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In a p-n-p transistor, what is the primary charge carrier injected into the base region, and how does it differ from the charge carrier in an n-p-n transistor? Additionally, what is the biasing condition of the emitter-base junction?

1. The voltage gain of a new transistor G' is equal to 2/3 of G.
2. The gain G is calculated as 25 times the ratio of R_out to R_in multiplied by 0.03.
3. In a p-n-p transistor, holes are introduced into the base, whereas in an n-p-n transistor, electrons are introduced into the base. The emitter-base junction is forward biased.
4. Refer to the provided diagram for further clarification.

Correct answer: In a p-n-p transistor, holes are introduced into the base, whereas in an n-p-n transistor, electrons are introduced into the base. The emitter-base junction is forward biased.

Solution

Option C is correct because it correctly describes the working principle of p-n-p and n-p-n transistors, including the biasing of the emitter-base junction. The other options are either incomplete or unrelated to the given context.

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