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The cause of the potential barrier in a p-n diode is

1. depletion of positive charges near the junction
2. depletion of negative charges near the junction
3. concentration of positive and negative charges near the junction
4. concentration of positive charges near the junction

Correct answer: concentration of positive and negative charges near the junction

Solution

The potential barrier in a p-n diode is caused by the concentration of positive charges on the n-side and negative charges on the p-side near the junction, which creates an electric field opposing further charge diffusion.

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