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C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator whereas Si is intrinsic semiconductor. This is because:

1. In case of C the valence band is not completely filled at absolute zero temperature.
2. In case of C the conduction band is partly filled even at absolute zero temperature.
3. The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.
4. The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit.

Correct answer: The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.

Solution

Carbon's bonding electrons are in the second orbit, which has a higher energy gap between the valence and conduction bands, making it an insulator. Silicon's bonding electrons are in the third orbit, resulting in a smaller energy gap, allowing it to behave as an intrinsic semiconductor.

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