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In the figure, ln(ρi) is plotted as a function of 1/T, where ρi is the intrinsic resistivity of silicon, T is the temperature, and the plot is almost linear. The slope of the line can be used to estimate

1. band gap energy of silicon (E_g)
2. sum of electron and hole mobility in silicon (μₙ + μₚ)
3. reciprocal of the sum of electron and hole mobility in silicon (μₙ + μₚ)⁻¹
4. intrinsic carrier concentration of silicon (n_i)

Correct answer: band gap energy of silicon (E_g)

Solution

The slope of the line in the plot of ln(ρi) versus 1/T is directly related to the band gap energy of silicon (E_g) because it reflects how the intrinsic resistivity changes with temperature, which is influenced by the energy required to excite electrons across the band gap.

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