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In CMOS technology, shallow P-well or N-well regions can be formed using

1. low pressure chemical vapour deposition
2. low energy sputtering
3. low temperature dry oxidation
4. low energy ion-implantation

Correct answer: low energy ion-implantation

Solution

Low energy ion-implantation is the correct method because it allows for precise control over the doping concentration and depth of the P-well or N-well regions, which is essential for the performance of CMOS devices.

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