A Zener diode, when used in voltage stabilization circuits, is biased in

reverse bias region below the breakdown voltage
reverse breakdown region
forward bias region
forward bias constant current mode

Correct answer: reverse breakdown region

Solution

A Zener diode used for voltage regulation is operated in reverse bias beyond its breakdown voltage. In this region, the voltage across it remains nearly constant, which is why it is useful for stabilization.

Related GATE Technical questions

The electron and hole concentrations in an intrinsic semiconductor are $n_i$ per cm$^3$ at 300 K. Now, if acceptor impurities are introduced with a concentration of $N_A$ per cm$^3$ (where $N_A \gg n_i$), the electron concentration per cm$^3$ at 300 K will be
In a $p^+n$ junction diode under reverse bias, the magnitude of electric field is maximum at
Consider a silicon p-n junction at room temperature having the following parameters: Doping on the n-side = $1\times10^{17}\ \text{cm}^{-3}$ Depletion width on the n-side = $0.1\ \mu\text{m}$ Depletion width on the p-side = $1.0\ \mu\text{m}$ Intrinsic carrier concentration = $1.4\times10^{10}\ \text{cm}^{-3}$ Thermal voltage = $26\ \text{mV}$ Permittivity of free space = $8.85\times10^{-14}\ \text{F cm}^{-1}$ Dielectric constant of silicon = 12 The built-in potential of the junction is
Statement for Linked Answer Questions 52 and 53: The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: $T=300\,\text{K}$, electronic charge $=1.6\times10^{-19}\,\text{C}$, thermal voltage $=26\,\text{mV}$, and electron mobility $=1350\,\text{cm}^2/\text{V-s}$. The magnitude of the electric field at $x=0.5\,\mu\text{m}$ is
Drift current in semiconductors depends upon
The doping concentrations on the p-side and n-side of a silicon diode are $1\times10^{16}\,\text{cm}^{-3}$ and $1\times10^{17}\,\text{cm}^{-3}$, respectively. A forward bias of $0.3\,\text{V}$ is applied to the diode. At $T=300\,\text{K}$, the intrinsic carrier concentration of silicon is $n_i=1.5\times10^{10}\,\text{cm}^{-3}$ and $kT/q=26\,\text{mV}$. The electron concentration at the edge of the depletion region on the p-side is

⚔️ Practice GATE Technical free + battle 1v1 →