Exams › GATE › Technical
Drift current in semiconductors depends upon
- only the electric field
- only the carrier concentration gradient
- both the electric field and the carrier concentration
- both the electric field and the carrier concentration gradient
Correct answer: only the electric field
Solution
Drift current arises due to the motion of charge carriers under an electric field. The carrier concentration gradient is responsible for diffusion current, not drift current.
Related GATE Technical questions
- The electron and hole concentrations in an intrinsic semiconductor are \(n_i\) per cm\(^3\) at 300 K. Now, if acceptor impurities are introduced with a concentration of \(N_A\) per cm\(^3\) (where \(N_A \gg n_i\)), the electron concentration per cm\(^3\) at 300 K will be
- In a \(p^+n\) junction diode under reverse bias, the magnitude of electric field is maximum at
- Consider a silicon p-n junction at room temperature having the following parameters: Doping on the n-side = $1\times10^{17}\ \text{cm}^{-3}$ Depletion width on the n-side = $0.1\ \mu\text{m}$ Depletion width on the p-side = $1.0\ \mu\text{m}$ Intrinsic carrier concentration = $1.4\times10^{10}\ \text{cm}^{-3}$ Thermal voltage = $26\ \text{mV}$ Permittivity of free space = $8.85\times10^{-14}\ \text{F cm}^{-1}$ Dielectric constant of silicon = 12 The built-in potential of the junction is
- Statement for Linked Answer Questions 52 and 53: The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: $T=300\,\text{K}$, electronic charge $=1.6\times10^{-19}\,\text{C}$, thermal voltage $=26\,\text{mV}$, and electron mobility $=1350\,\text{cm}^2/\text{V-s}$. The magnitude of the electric field at $x=0.5\,\mu\text{m}$ is
- A Zener diode, when used in voltage stabilization circuits, is biased in
- The doping concentrations on the p-side and n-side of a silicon diode are $1\times10^{16}\,\text{cm}^{-3}$ and $1\times10^{17}\,\text{cm}^{-3}$, respectively. A forward bias of $0.3\,\text{V}$ is applied to the diode. At $T=300\,\text{K}$, the intrinsic carrier concentration of silicon is $n_i=1.5\times10^{10}\,\text{cm}^{-3}$ and $kT/q=26\,\text{mV}$. The electron concentration at the edge of the depletion region on the p-side is
⚔️ Practice GATE Technical free + battle 1v1 →