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Which of the following is true?

1. (A) A silicon wafer heavily doped with boron is a p+ substrate
2. (B) A silicon wafer lightly doped with boron is a p+ substrate
3. (C) A silicon wafer heavily doped with arsenic is a p+ substrate
4. (D) A silicon wafer lightly doped with arsenic is a p+ substrate

Correct answer: (A) A silicon wafer heavily doped with boron is a p+ substrate

Solution

A silicon wafer that is heavily doped with boron has an excess of holes, which makes it a p+ substrate, indicating a high concentration of p-type carriers.

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