Statement I: When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semiconductor such that P-type has excess holes and N-type has excess electrons.
Statement II: When such P-type and N-type semiconductors, are fused to make a junction, a curren

Question

Statement I: When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semiconductor such that P-type has excess holes and N-type has excess electrons.
Statement II: When such P-type and N-type semiconductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements, choose the most appropriate answer from the options given below.

Accepted Answer

Statement I is correct but statement II is incorrect. Statement I accurately describes the doping process of silicon, where boron creates holes (P-type) and arsenic adds electrons (N-type). However, Statement II is incorrect because a current does not automatically flow in a P-N junction without an external voltage applied; it requires a bias to create a current.

Solution

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