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In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces

1. superior quality oxide with a higher growth rate
2. inferior quality oxide with a higher growth rate
3. inferior quality oxide with a lower growth rate
4. superior quality oxide with a lower growth rate

Correct answer: superior quality oxide with a lower growth rate

Solution

Dry oxidation produces a higher quality silicon dioxide layer due to the absence of water vapor, which can introduce impurities, but this process is slower compared to wet oxidation.

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